Semiconductor Devices : (Record no. 22516)
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000 -LEADER | |
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fixed length control field | 05430 a2200241 4500 |
003 - CONTROL NUMBER IDENTIFIER | |
control field | VITAP |
005 - DATE AND TIME OF LATEST TRANSACTION | |
control field | 20210909095750.0 |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
fixed length control field | 180915b ||||| |||| 00| 0 eng d |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
International Standard Book Number | 9788126556755 |
040 ## - CATALOGING SOURCE | |
Transcribing agency | VITAP |
082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER | |
Edition number | 23rd |
Classification number | 621.38152 SZE |
100 ## - MAIN ENTRY--PERSONAL NAME | |
Personal name | Sze, S. M. |
9 (RLIN) | 10791 |
245 ## - TITLE STATEMENT | |
Title | Semiconductor Devices : |
Remainder of title | Physics and Technology / |
Statement of responsibility, etc. | S. M. Sze and M. K. Lee |
250 ## - EDITION STATEMENT | |
Edition statement | 3rd ed. |
260 ## - PUBLICATION, DISTRIBUTION, ETC. | |
Name of publisher, distributor, etc. | Wiley India Pvt. Ltd. |
Place of publication, distribution, etc. | New Delhi |
Date of publication, distribution, etc. | 2018 |
300 ## - PHYSICAL DESCRIPTION | |
Extent | ix, 582p. : ill. ; |
Dimensions | 26cm |
500 ## - GENERAL NOTE | |
General note | It includes index and appendix |
501 ## - WITH NOTE | |
With note | This book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices. <br/><br/>Table of Contents:<br/><br/><br/>Preface<br/><br/>Acknowledgments<br/><br/> <br/><br/>Chapter 0 1 Introduction<br/><br/>0.1 Semiconductor Devices<br/><br/>0.2 Semiconductor Technology<br/><br/> <br/><br/>Part I Semiconductor Physics<br/><br/>Chapter 1 Energy Bands and Carrier Concentration in Thermal Equilibrium<br/><br/>1.1 Semiconductor Materials<br/><br/>1.2 Basic Crystal Structures<br/><br/>1.3 Valence Bonds<br/><br/>1.4 Energy Bands<br/><br/>1.5 Intrinsic Carrier Concentration<br/><br/>1.6 Donors and Acceptors<br/><br/> <br/><br/>Chapter 2 Carrier Transport Phenomena<br/><br/>2.1 Carrier Drift<br/><br/>2.2 Carrier Diffusion<br/><br/>2.3 Generation and Recombination Processes<br/><br/>2.4 Continuity Equation<br/><br/>2.5 Thermionic Emission Process<br/><br/>2.6 Tunneling Process<br/><br/>2.7 Space-Charge Effect<br/><br/>2.8 High-Field Effects<br/><br/> <br/><br/>Part II Semiconductor Devices<br/><br/>Chapter 3 p-n Junction<br/><br/>3.1 Thermal Equilibrium Condition<br/><br/>3.2 Depletion Region<br/><br/>3.3 Depletion Capacitance<br/><br/>3.4 Current-Voltage Characteristics<br/><br/>3.5 Charge Storage and Transient Behavior<br/><br/>3.6 Junction Breakdown<br/><br/>3.7 Heterojunction<br/><br/> <br/><br/>Chapter 4 Bipolar Transistors and Related Devices<br/><br/>4.1 Transistor Action<br/><br/>4.2 Static Characteristics of Bipolar Transistors<br/><br/>4.3 Frequency Response and Switching of Bipolar Transistors<br/><br/>4.4 Nonideal Effects<br/><br/>4.5 Heterojunction Bipolar Transistors<br/><br/>4.6 Thyristors and Related Power Devices<br/><br/> <br/><br/>Chapter 5 MOS Capacitor and MOSFET<br/><br/>5.1 Ideal MOS Capacitor<br/><br/>5.2 SiO2-Si MOS Capacitor<br/><br/>5.3 Carrier Transport in MOS Capacitors<br/><br/>5.4 Charge-Coupled Devices (CCD)<br/><br/>5.5 MOSFET Fundamentals<br/><br/> <br/><br/>Chapter 6 Advanced MOSFET and Related Devices<br/><br/>6.1 MOSFET Scaling<br/><br/>6.2 CMOS and BiCMOS<br/><br/>6.3 MOSFET on Insulator<br/><br/>6.4 MOS Memory Structures<br/><br/>6.5 Power MOSFET<br/><br/> <br/><br/>Chapter 7 MESFET and Related Devices<br/><br/>7.1 Metal-Semiconductor Contacts<br/><br/>7.2 MESFET<br/><br/>7.3 MODFET<br/><br/> <br/><br/>Chapter 8 Microwave Diodes; Quantum-Effect and Hot-Electron Devices<br/><br/>8.1 Microwave Frequency Bands<br/><br/>8.2 Tunnel Diode<br/><br/>8.3 IMPATT Diode<br/><br/>8.4 Transferred-Electron Devices<br/><br/>8.5 Quantum-Effect Devices<br/><br/>8.6 Hot-Electron Devices<br/><br/> <br/><br/>Chapter 9 Light Emitting Diodes and Lasers<br/><br/>9.1 Radiative Transitions and Optical Absorption<br/><br/>9.2 Light-Emitting Diodes<br/><br/>9.3 Various Light-Emitting Diodes<br/><br/>9.4 Semiconductor Lasers<br/><br/> <br/><br/>Chapter 10 Photodetectors and Solar Cells<br/><br/>10.1 Photodetectors<br/><br/>10.2 Solar Cells<br/><br/>10.3 Silicon and Compound-Semiconductor Solar Cells<br/><br/>10.4 Third-Generation Solar Cells<br/><br/>10.5 Optical Concentration<br/><br/> <br/><br/>Part III Semiconductor Technology<br/><br/>Chapter 11 Crystal Growth and Epitaxy<br/><br/>11.1 Silicon Crystal Growth from the Melt<br/><br/>11.2 Silicon Float-Zone Process<br/><br/>11.3 GaAs Crystal-Growth Techniques<br/><br/>11.4 Material Characterization<br/><br/>11.5 Epitaxial-Growth Techniques<br/><br/>11.6 Structures and Defects in Epitaxial Layers<br/><br/> <br/><br/>Chapter 12 Film Formation<br/><br/>12.1 Thermal Oxidation<br/><br/>12.2 Chemical Vapor Deposition of Dielectrics<br/><br/>12.3 Chemical Vapor Deposition of Polysilicon<br/><br/>12.4 Atom Layer Deposition<br/><br/>12.5 Metallization<br/><br/> <br/><br/>Chapter 13 Lithography and Etching<br/><br/>13.1 Optical Lithography<br/><br/>13.2 Next-Generation Lithographic Methods<br/><br/>13.3 Wet Chemical Etching<br/><br/>13.4 Dry Etching<br/><br/> <br/><br/>Chapter 14 Impurity Doping<br/><br/>14.1 Basic Diffusion Process<br/><br/>14.2 Extrinsic Diffusion<br/><br/>14.3 Diffusion-Related Processes<br/><br/>14.4 Range of Implanted Ions<br/><br/>14.5 Implant Damage and Annealing<br/><br/>14.6 Implantation-Related Processes<br/><br/> <br/><br/>Chapter 15 Integrated Devices<br/><br/>15.1 Passive Components<br/><br/>15.2 Bipolar Technology<br/><br/>15.3 MOSFET Technology<br/><br/>15.4 MESFET Technology<br/><br/>15.5 Challenges for Nanoelectronics<br/><br/> <br/><br/>Appendix A List of Symbols<br/><br/>Appendix B International Systems of Units (SI Units)<br/><br/>Appendix C Unit Prefixes<br/><br/>Appendix D Greek Alphabet<br/><br/>Appendix E Physical Constants<br/><br/>Appendix F Properties of Important Element and Binary Compound Semiconductors at 300 K<br/><br/>Appendix G Properties of Si and GaAs at 300 K<br/><br/>Appendix H Derivation of the Density of States in a Semiconductor<br/><br/>Appendix I Derivation of Recombination Rate for Indirect Recombination<br/><br/>Appendix J Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode<br/><br/>Appendix K Basic Kinetic Theory of Gases<br/><br/>Appendix L Answers to Selected Problems<br/><br/>Photo credits<br/><br/>Index<br/> |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
9 (RLIN) | 10792 |
Topical term or geographic name entry element | Semiconductors |
700 ## - ADDED ENTRY--PERSONAL NAME | |
9 (RLIN) | 10793 |
Personal name | Lee, M. K. |
856 ## - ELECTRONIC LOCATION AND ACCESS | |
Uniform Resource Identifier | <a href="https://www.wileyindia.com/semiconductor-devices-physics-and-technology-3ed-isv.html">https://www.wileyindia.com/semiconductor-devices-physics-and-technology-3ed-isv.html</a> |
942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
Source of classification or shelving scheme | Dewey Decimal Classification |
Koha item type | Text Book |
Edition | 3rd Ed. |
Classification part | 621.38152 |
Call number suffix | SZE |
Withdrawn status | Lost status | Source of classification or shelving scheme | Materials specified (bound volume or other part) | Damaged status | Not for loan | Collection code | Home library | Current library | Shelving location | Date acquired | Source of acquisition | Cost, normal purchase price | Total Checkouts | Full call number | Barcode | Date last seen | Cost, replacement price | Price effective from | Koha item type | Public note | Total Renewals | Date last checked out | Checked out |
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Dewey Decimal Classification | Paper Back | Not For Loan | Reference | School of Electronics Section | VIT-AP | General Stacks | 2018-09-15 | 3 | 536.52 | 621.38152 SZE | 011458 | 2018-09-22 | 789.00 | 2018-09-15 | Reference Book | ECE | |||||||
Dewey Decimal Classification | Paper Back | School of Electronics Section | VIT-AP | General Stacks | 2018-09-15 | 3 | 536.52 | 14 | 621.38152 SZE | 011463 | 2025-01-04 | 789.00 | 2018-09-15 | Text Book | ECE | 1 | 2024-12-21 | ||||||
Dewey Decimal Classification | Paper Back | School of Electronics Section | VIT-AP | General Stacks | 2018-09-15 | 3 | 536.52 | 17 | 621.38152 SZE | 011464 | 2023-09-24 | 789.00 | 2018-09-15 | Text Book | ECE | 2 | 2023-09-02 | ||||||
Dewey Decimal Classification | Paper Back | School of Electronics Section | VIT-AP | General Stacks | 2018-09-15 | 3 | 536.52 | 10 | 621.38152 SZE | 011465 | 2025-03-20 | 789.00 | 2018-09-15 | Text Book | ECE | 1 | 2025-03-06 | ||||||
Dewey Decimal Classification | Paper Back | School of Electronics Section | VIT-AP | General Stacks | 2018-09-15 | 3 | 536.52 | 7 | 621.38152 SZE | 011467 | 2025-01-23 | 789.00 | 2018-09-15 | Text Book | ECE | 2025-01-10 | |||||||
Dewey Decimal Classification | Paper Back | School of Electronics Section | VIT-AP | General Stacks | 2018-09-15 | 3 | 536.52 | 8 | 621.38152 SZE | 011461 | 2023-09-21 | 789.00 | 2018-09-15 | Text Book | ECE | 2023-09-21 | 2024-03-19 | ||||||
Dewey Decimal Classification | Paper Back | School of Electronics Section | VIT-AP | General Stacks | 2018-09-15 | 3 | 536.52 | 13 | 621.38152 SZE | 011466 | 2024-09-17 | 789.00 | 2018-09-15 | Text Book | ECE | 2 | 2024-08-28 | ||||||
Dewey Decimal Classification | Paper Back | School of Electronics Section | VIT-AP | General Stacks | 2018-09-15 | 3 | 536.52 | 16 | 621.38152 SZE | 011462 | 2025-05-10 | 789.00 | 2018-09-15 | Text Book | ECE | 2 | 2025-05-10 | 2025-11-06 | |||||
Dewey Decimal Classification | Paper Back | School of Electronics Section | VIT-AP | General Stacks | 2018-09-15 | 3 | 536.52 | 16 | 621.38152 SZE | 011460 | 2024-12-06 | 789.00 | 2018-09-15 | Text Book | ECE | 1 | 2024-12-02 | ||||||
Dewey Decimal Classification | Paper Back | School of Electronics Section | VIT-AP | General Stacks | 2018-09-15 | 3 | 536.52 | 13 | 621.38152 SZE | 011459 | 2024-08-16 | 789.00 | 2018-09-15 | Text Book | ECE | 1 | 2024-07-25 |