Semiconductor Devices : (Record no. 22516)

MARC details
000 -LEADER
fixed length control field 05430 a2200241 4500
003 - CONTROL NUMBER IDENTIFIER
control field VITAP
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20210909095750.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 180915b ||||| |||| 00| 0 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9788126556755
040 ## - CATALOGING SOURCE
Transcribing agency VITAP
082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER
Edition number 23rd
Classification number 621.38152 SZE
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Sze, S. M.
9 (RLIN) 10791
245 ## - TITLE STATEMENT
Title Semiconductor Devices :
Remainder of title Physics and Technology /
Statement of responsibility, etc. S. M. Sze and M. K. Lee
250 ## - EDITION STATEMENT
Edition statement 3rd ed.
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. Wiley India Pvt. Ltd.
Place of publication, distribution, etc. New Delhi
Date of publication, distribution, etc. 2018
300 ## - PHYSICAL DESCRIPTION
Extent ix, 582p. : ill. ;
Dimensions 26cm
500 ## - GENERAL NOTE
General note It includes index and appendix
501 ## - WITH NOTE
With note This book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices. <br/><br/>Table of Contents:<br/><br/><br/>Preface<br/><br/>Acknowledgments<br/><br/> <br/><br/>Chapter 0 1 Introduction<br/><br/>0.1 Semiconductor Devices<br/><br/>0.2 Semiconductor Technology<br/><br/> <br/><br/>Part I Semiconductor Physics<br/><br/>Chapter 1 Energy Bands and Carrier Concentration in Thermal Equilibrium<br/><br/>1.1 Semiconductor Materials<br/><br/>1.2 Basic Crystal Structures<br/><br/>1.3 Valence Bonds<br/><br/>1.4 Energy Bands<br/><br/>1.5 Intrinsic Carrier Concentration<br/><br/>1.6 Donors and Acceptors<br/><br/> <br/><br/>Chapter 2 Carrier Transport Phenomena<br/><br/>2.1 Carrier Drift<br/><br/>2.2 Carrier Diffusion<br/><br/>2.3 Generation and Recombination Processes<br/><br/>2.4 Continuity Equation<br/><br/>2.5 Thermionic Emission Process<br/><br/>2.6 Tunneling Process<br/><br/>2.7 Space-Charge Effect<br/><br/>2.8 High-Field Effects<br/><br/> <br/><br/>Part II Semiconductor Devices<br/><br/>Chapter 3 p-n Junction<br/><br/>3.1 Thermal Equilibrium Condition<br/><br/>3.2 Depletion Region<br/><br/>3.3 Depletion Capacitance<br/><br/>3.4 Current-Voltage Characteristics<br/><br/>3.5 Charge Storage and Transient Behavior<br/><br/>3.6 Junction Breakdown<br/><br/>3.7 Heterojunction<br/><br/> <br/><br/>Chapter 4 Bipolar Transistors and Related Devices<br/><br/>4.1 Transistor Action<br/><br/>4.2 Static Characteristics of Bipolar Transistors<br/><br/>4.3 Frequency Response and Switching of Bipolar Transistors<br/><br/>4.4 Nonideal Effects<br/><br/>4.5 Heterojunction Bipolar Transistors<br/><br/>4.6 Thyristors and Related Power Devices<br/><br/> <br/><br/>Chapter 5 MOS Capacitor and MOSFET<br/><br/>5.1 Ideal MOS Capacitor<br/><br/>5.2 SiO2-Si MOS Capacitor<br/><br/>5.3 Carrier Transport in MOS Capacitors<br/><br/>5.4 Charge-Coupled Devices (CCD)<br/><br/>5.5 MOSFET Fundamentals<br/><br/> <br/><br/>Chapter 6 Advanced MOSFET and Related Devices<br/><br/>6.1 MOSFET Scaling<br/><br/>6.2 CMOS and BiCMOS<br/><br/>6.3 MOSFET on Insulator<br/><br/>6.4 MOS Memory Structures<br/><br/>6.5 Power MOSFET<br/><br/> <br/><br/>Chapter 7 MESFET and Related Devices<br/><br/>7.1 Metal-Semiconductor Contacts<br/><br/>7.2 MESFET<br/><br/>7.3 MODFET<br/><br/> <br/><br/>Chapter 8 Microwave Diodes; Quantum-Effect and Hot-Electron Devices<br/><br/>8.1 Microwave Frequency Bands<br/><br/>8.2 Tunnel Diode<br/><br/>8.3 IMPATT Diode<br/><br/>8.4 Transferred-Electron Devices<br/><br/>8.5 Quantum-Effect Devices<br/><br/>8.6 Hot-Electron Devices<br/><br/> <br/><br/>Chapter 9 Light Emitting Diodes and Lasers<br/><br/>9.1 Radiative Transitions and Optical Absorption<br/><br/>9.2 Light-Emitting Diodes<br/><br/>9.3 Various Light-Emitting Diodes<br/><br/>9.4 Semiconductor Lasers<br/><br/> <br/><br/>Chapter 10 Photodetectors and Solar Cells<br/><br/>10.1 Photodetectors<br/><br/>10.2 Solar Cells<br/><br/>10.3 Silicon and Compound-Semiconductor Solar Cells<br/><br/>10.4 Third-Generation Solar Cells<br/><br/>10.5 Optical Concentration<br/><br/> <br/><br/>Part III Semiconductor Technology<br/><br/>Chapter 11 Crystal Growth and Epitaxy<br/><br/>11.1 Silicon Crystal Growth from the Melt<br/><br/>11.2 Silicon Float-Zone Process<br/><br/>11.3 GaAs Crystal-Growth Techniques<br/><br/>11.4 Material Characterization<br/><br/>11.5 Epitaxial-Growth Techniques<br/><br/>11.6 Structures and Defects in Epitaxial Layers<br/><br/> <br/><br/>Chapter 12 Film Formation<br/><br/>12.1 Thermal Oxidation<br/><br/>12.2 Chemical Vapor Deposition of Dielectrics<br/><br/>12.3 Chemical Vapor Deposition of Polysilicon<br/><br/>12.4 Atom Layer Deposition<br/><br/>12.5 Metallization<br/><br/> <br/><br/>Chapter 13 Lithography and Etching<br/><br/>13.1 Optical Lithography<br/><br/>13.2 Next-Generation Lithographic Methods<br/><br/>13.3 Wet Chemical Etching<br/><br/>13.4 Dry Etching<br/><br/> <br/><br/>Chapter 14 Impurity Doping<br/><br/>14.1 Basic Diffusion Process<br/><br/>14.2 Extrinsic Diffusion<br/><br/>14.3 Diffusion-Related Processes<br/><br/>14.4 Range of Implanted Ions<br/><br/>14.5 Implant Damage and Annealing<br/><br/>14.6 Implantation-Related Processes<br/><br/> <br/><br/>Chapter 15 Integrated Devices<br/><br/>15.1 Passive Components<br/><br/>15.2 Bipolar Technology<br/><br/>15.3 MOSFET Technology<br/><br/>15.4 MESFET Technology<br/><br/>15.5 Challenges for Nanoelectronics<br/><br/> <br/><br/>Appendix A List of Symbols<br/><br/>Appendix B International Systems of Units (SI Units)<br/><br/>Appendix C Unit Prefixes<br/><br/>Appendix D Greek Alphabet<br/><br/>Appendix E Physical Constants<br/><br/>Appendix F Properties of Important Element and Binary Compound Semiconductors at 300 K<br/><br/>Appendix G Properties of Si and GaAs at 300 K<br/><br/>Appendix H Derivation of the Density of States in a Semiconductor<br/><br/>Appendix I Derivation of Recombination Rate for Indirect Recombination<br/><br/>Appendix J Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode<br/><br/>Appendix K Basic Kinetic Theory of Gases<br/><br/>Appendix L Answers to Selected Problems<br/><br/>Photo credits<br/><br/>Index<br/>
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
9 (RLIN) 10792
Topical term or geographic name entry element Semiconductors
700 ## - ADDED ENTRY--PERSONAL NAME
9 (RLIN) 10793
Personal name Lee, M. K.
856 ## - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://www.wileyindia.com/semiconductor-devices-physics-and-technology-3ed-isv.html">https://www.wileyindia.com/semiconductor-devices-physics-and-technology-3ed-isv.html</a>
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme Dewey Decimal Classification
Koha item type Text Book
Edition 3rd Ed.
Classification part 621.38152
Call number suffix SZE
Holdings
Withdrawn status Lost status Source of classification or shelving scheme Materials specified (bound volume or other part) Damaged status Not for loan Collection code Home library Current library Shelving location Date acquired Source of acquisition Cost, normal purchase price Total Checkouts Full call number Barcode Date last seen Cost, replacement price Price effective from Koha item type Public note Total Renewals Date last checked out Checked out
    Dewey Decimal Classification Paper Back   Not For Loan Reference School of Electronics Section VIT-AP General Stacks 2018-09-15 3 536.52   621.38152 SZE 011458 2018-09-22 789.00 2018-09-15 Reference Book ECE      
    Dewey Decimal Classification Paper Back       School of Electronics Section VIT-AP General Stacks 2018-09-15 3 536.52 14 621.38152 SZE 011463 2025-01-04 789.00 2018-09-15 Text Book ECE 1 2024-12-21  
    Dewey Decimal Classification Paper Back       School of Electronics Section VIT-AP General Stacks 2018-09-15 3 536.52 17 621.38152 SZE 011464 2023-09-24 789.00 2018-09-15 Text Book ECE 2 2023-09-02  
    Dewey Decimal Classification Paper Back       School of Electronics Section VIT-AP General Stacks 2018-09-15 3 536.52 10 621.38152 SZE 011465 2025-03-20 789.00 2018-09-15 Text Book ECE 1 2025-03-06  
    Dewey Decimal Classification Paper Back       School of Electronics Section VIT-AP General Stacks 2018-09-15 3 536.52 7 621.38152 SZE 011467 2025-01-23 789.00 2018-09-15 Text Book ECE   2025-01-10  
    Dewey Decimal Classification Paper Back       School of Electronics Section VIT-AP General Stacks 2018-09-15 3 536.52 8 621.38152 SZE 011461 2023-09-21 789.00 2018-09-15 Text Book ECE   2023-09-21 2024-03-19
    Dewey Decimal Classification Paper Back       School of Electronics Section VIT-AP General Stacks 2018-09-15 3 536.52 13 621.38152 SZE 011466 2024-09-17 789.00 2018-09-15 Text Book ECE 2 2024-08-28  
    Dewey Decimal Classification Paper Back       School of Electronics Section VIT-AP General Stacks 2018-09-15 3 536.52 16 621.38152 SZE 011462 2025-05-10 789.00 2018-09-15 Text Book ECE 2 2025-05-10 2025-11-06
    Dewey Decimal Classification Paper Back       School of Electronics Section VIT-AP General Stacks 2018-09-15 3 536.52 16 621.38152 SZE 011460 2024-12-06 789.00 2018-09-15 Text Book ECE 1 2024-12-02  
    Dewey Decimal Classification Paper Back       School of Electronics Section VIT-AP General Stacks 2018-09-15 3 536.52 13 621.38152 SZE 011459 2024-08-16 789.00 2018-09-15 Text Book ECE 1 2024-07-25  

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