Simulation and Modelling of 2D Material FET Transistor for Low Power and Bio-Sensing Applications / Vydha Pradeep Kumar

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TextPublication details: Amaravathi VIT-AP University 2024Description: xiii, 127p. ill. ; 30cmSubject(s):

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Item type	Current library	Collection	Call number	Status	Notes	Date due	Barcode
Thesis	VIT-AP Reference	Reference	621.3815 PRA (Browse shelf(Opens below))	Not for loan	ECE		TH57

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Previous	621.3815 MAN Modeling and Simulation of Reverse T-Shaped Channel Tunnel FET for RF and Sensing Applications	621.3815 NOM Simulation and Modelling of High Power and High Frequency FINFET’s for RFIC Application	621.3815 PRA Simulation and Modeling of Gate-All-Around Junctionless FET for RF and Linear Applications	621.3815 PRA Simulation and Modelling of 2D Material FET Transistor for Low Power and Bio-Sensing Applications	621.3815 SAL Linear Integrated Circuits /	621.3822 KRI Electrocardiographic Signal Processing for Automated Diagnosis of Cardiovascular Disorders	621.3824 JAY Substrate Integrated Waveguide Based Multiplexing Antennas	Next

It includes Abstract, Acknowledgement, Table of Contents, List of Figures, List of Tables, List of Terms and Abbreviations, and Chapters etc.

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