Exploring Negative Capacitance Effects In Tunnel Field-Effect Transistors: Modeling, Design, Optimization, and Sensing Applications / Pathakamuri Anil Kumar

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TextPublication details: Amaravathi VIT-AP University 2025Description: xvii, 187p. : ill. ; 29cmSubject(s):

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Item type	Current library	Collection	Call number	Materials specified	Status	Notes	Barcode
Thesis	VIT-AP Reference	Reference	621.384 ANI (Browse shelf(Opens below))	Hard Bound	Not for loan	ECE	TH155

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Previous	621.3825 VEN Design and Analysis of a Compact Antenna Incorporating Different Slots for Improvement and Band Rejection Characteristics	621.38275 SRI High Performance Active Metasurface Based Multifunctional Devices for Biosensing Applications	621.384 ACH Design of Robust Decentralized Control Strategies for Hybrid MIMO Systems	621.384 ANI Exploring Negative Capacitance Effects In Tunnel Field-Effect Transistors: Modeling, Design, Optimization, and Sensing Applications	621.384 SRI Application of Non-Aligned Double Gate Transistors in Circuit Design of Logic Gates	621.384 VAM Design and Development of Wideband Antennas Using Characteristic Mode Analysis	621.3845 DHA Investigation and improvement of performance parameters in a Charge Pump Phase locked loop for 5G applications	Next

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