It includes index and appendix

This book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.

Table of Contents:


Preface

Acknowledgments



Chapter 0 1 Introduction

0.1 Semiconductor Devices

0.2 Semiconductor Technology



Part I Semiconductor Physics

Chapter 1 Energy Bands and Carrier Concentration in Thermal Equilibrium

1.1 Semiconductor Materials

1.2 Basic Crystal Structures

1.3 Valence Bonds

1.4 Energy Bands

1.5 Intrinsic Carrier Concentration

1.6 Donors and Acceptors



Chapter 2 Carrier Transport Phenomena

2.1 Carrier Drift

2.2 Carrier Diffusion

2.3 Generation and Recombination Processes

2.4 Continuity Equation

2.5 Thermionic Emission Process

2.6 Tunneling Process

2.7 Space-Charge Effect

2.8 High-Field Effects



Part II Semiconductor Devices

Chapter 3 p-n Junction

3.1 Thermal Equilibrium Condition

3.2 Depletion Region

3.3 Depletion Capacitance

3.4 Current-Voltage Characteristics

3.5 Charge Storage and Transient Behavior

3.6 Junction Breakdown

3.7 Heterojunction



Chapter 4 Bipolar Transistors and Related Devices

4.1 Transistor Action

4.2 Static Characteristics of Bipolar Transistors

4.3 Frequency Response and Switching of Bipolar Transistors

4.4 Nonideal Effects

4.5 Heterojunction Bipolar Transistors

4.6 Thyristors and Related Power Devices



Chapter 5 MOS Capacitor and MOSFET

5.1 Ideal MOS Capacitor

5.2 SiO2-Si MOS Capacitor

5.3 Carrier Transport in MOS Capacitors

5.4 Charge-Coupled Devices (CCD)

5.5 MOSFET Fundamentals



Chapter 6 Advanced MOSFET and Related Devices

6.1 MOSFET Scaling

6.2 CMOS and BiCMOS

6.3 MOSFET on Insulator

6.4 MOS Memory Structures

6.5 Power MOSFET



Chapter 7 MESFET and Related Devices

7.1 Metal-Semiconductor Contacts

7.2 MESFET

7.3 MODFET



Chapter 8 Microwave Diodes; Quantum-Effect and Hot-Electron Devices

8.1 Microwave Frequency Bands

8.2 Tunnel Diode

8.3 IMPATT Diode

8.4 Transferred-Electron Devices

8.5 Quantum-Effect Devices

8.6 Hot-Electron Devices



Chapter 9 Light Emitting Diodes and Lasers

9.1 Radiative Transitions and Optical Absorption

9.2 Light-Emitting Diodes

9.3 Various Light-Emitting Diodes

9.4 Semiconductor Lasers



Chapter 10 Photodetectors and Solar Cells

10.1 Photodetectors

10.2 Solar Cells

10.3 Silicon and Compound-Semiconductor Solar Cells

10.4 Third-Generation Solar Cells

10.5 Optical Concentration



Part III Semiconductor Technology

Chapter 11 Crystal Growth and Epitaxy

11.1 Silicon Crystal Growth from the Melt

11.2 Silicon Float-Zone Process

11.3 GaAs Crystal-Growth Techniques

11.4 Material Characterization

11.5 Epitaxial-Growth Techniques

11.6 Structures and Defects in Epitaxial Layers



Chapter 12 Film Formation

12.1 Thermal Oxidation

12.2 Chemical Vapor Deposition of Dielectrics

12.3 Chemical Vapor Deposition of Polysilicon

12.4 Atom Layer Deposition

12.5 Metallization



Chapter 13 Lithography and Etching

13.1 Optical Lithography

13.2 Next-Generation Lithographic Methods

13.3 Wet Chemical Etching

13.4 Dry Etching



Chapter 14 Impurity Doping

14.1 Basic Diffusion Process

14.2 Extrinsic Diffusion

14.3 Diffusion-Related Processes

14.4 Range of Implanted Ions

14.5 Implant Damage and Annealing

14.6 Implantation-Related Processes



Chapter 15 Integrated Devices

15.1 Passive Components

15.2 Bipolar Technology

15.3 MOSFET Technology

15.4 MESFET Technology

15.5 Challenges for Nanoelectronics



Appendix A List of Symbols

Appendix B International Systems of Units (SI Units)

Appendix C Unit Prefixes

Appendix D Greek Alphabet

Appendix E Physical Constants

Appendix F Properties of Important Element and Binary Compound Semiconductors at 300 K

Appendix G Properties of Si and GaAs at 300 K

Appendix H Derivation of the Density of States in a Semiconductor

Appendix I Derivation of Recombination Rate for Indirect Recombination

Appendix J Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode

Appendix K Basic Kinetic Theory of Gases

Appendix L Answers to Selected Problems

Photo credits

Index