Simulation, Modeling, and Reliability Analysis of Line Tunneling Based Gate-All-Around TFETs: Applications in RF Circuits and Biosensing / Kadava R.N. Karthik

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TextPublication details: Amaravathi VIT-AP University 2024Description: xx, 154p. ill. ; 30cmSubject(s):

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Item type	Current library	Collection	Call number	Status	Notes	Date due	Barcode
Thesis	VIT-AP Reference	Reference	621.3815 KAR (Browse shelf(Opens below))	Not for loan	ECE		TH107

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Previous	621.31244 PRA Optimization and Modeling of Czts-Based Solar Cells for Enhanced Photovoltaic Performance	621.3815 ANI Fast Computation Algorithm of Discrete Cosine Transform for Versatile Video Coding	621.3815 DIG Analytical Modeling and Simulation of Some High-Performance Vertical Tunnel Fets for Biosensing and Low Power Circuit Applications	621.3815 KAR Simulation, Modeling, and Reliability Analysis of Line Tunneling Based Gate-All-Around TFETs: Applications in RF Circuits and Biosensing	621.3815 MAN Modeling and Simulation of Reverse T-Shaped Channel Tunnel FET for RF and Sensing Applications	621.3815 NOM Simulation and Modelling of High Power and High Frequency FINFET’s for RFIC Application	621.3815 PRA Simulation and Modeling of Gate-All-Around Junctionless FET for RF and Linear Applications	Next

It includes Abstract, Acknowledgement, Table of Contents, List of Figures, List of Tables, List of Terms and Abbreviations, and Chapters etc.

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